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Back-gated OFET Interdigitated Substrate

产品编号:4116674
规格:Au source/drain, 230 nm SiO2 gate-insulator, varied W/L from 500 to 4000, 16 transistors per chip, chips (diced)
包装规格:1 PK
产品类别:进口试剂
品牌:Sigma-Aldrich
优惠价:立即咨询
产品价格
产品编号包装单位单价(元)国内现货国外库存询价单
41166741 PK12920
产品性质
form【形式】
chips (diced)
chips (each 15 x 15 mm2)
storage temp.【储存温度】
15-25℃
packaging【包装】
diced wafer on foil with air tight packaging
基本信息
General description【一般描述】
Substrate: 150 mm wafer according to semiconductor standard (used for bottom-gate)
Layer structure:
  • Gate: n-doped silicon (doping at wafer surface: n~3x1017/ cm3)
  • Gate oxide: 230 nm ± 10 nm SiO2 (thermal oxidation)
  • Drain/source: 30 nm Au with 10 nm high work function adhesion layer (ITO), by lift-off technique
  • Protection: resist AR PC 5000/3.1 (soluble in AZ-Thinner or acetone)
  • Layout: see images
  • Test chip size: 15 x 15 mm2
  • No. of chips: 60 per wafer
  • Contact pads: 0.5 x 0.5 mm2
  • No. of transistors: 16 per wafer

4 x transistors L= 2.5 μm W= 10 mm
4 x transistors L= 5 μm W= 10 mm
4 x transistors L= 10 μm W= 10 mm
4 x transistors L= 20 μm W= 10 mm
Application【应用】
Back-gated OFET Interdigitated Substrate (organic field-effect transistor) can be used in the fabrication of chemical sensors for potential usage in pH sensing and detection of immunoassays. It can also be used in the fabrication of biosensors by coating the sheets of the FET with a specific antibody for the detection of SARS-CoV-2. FET based biosensors can be potentially used in clinical diagnosis, point of care testing, and on-site detection.
Preparation Note【制备说明】
Recommendation for resist removal:
To guarantee a complete cleaning of the wafer / chip surface from resist residuals, please rinse by acetone and then dry the material immediately by nitrogen (compressed air).

Recommendation for material characterization:
If gate currents appear during the characterization of the field effect transistors, considerable variations could occur at the extraction of the carrier mobility. Therefore it is necessary to check the leakage currents over the reverse side (over the chip edges) of the OFET-substrates.
Legal Information【法律信息】
Product of Fraunhofer IPMS
产品说明
Storage and Stability【储存及稳定性】
Store the wafers at a cool and dark place and protect them against sun.

Resist layer was applied to prevent damage from scratches.
Expiration date is the recommended period for resist removal only. After resist removal, the substrate remains functional and does not expire.
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