单层石墨烯薄膜

100

film

• Graphene film.
• Growth method: CVD synthesis.
• Appearance: Transparent film.
• Transparency: >97%.
• Coverage: >95%.
• Number of graphene layers: 1.
• Thickness (theoretical): 0.345 nm.
• FET electron mobility on Al₂O₃: 2000 cm²/Vs.
• Hall electron mobility on SiO₂/Si: 4000 cm²/Vs.
• Sheet resistance on SiO₂/Si: 450±40 Ω/sq (1cm x1cm).
• Grain size: Up to 10 μm.
• Substrate: Copper Foil.
• Thickness: 18 μm.

The product is pre-treated for easier bottom layer removal. The monolayer graphene on the back side of copper is partially removed but not completely so an additional treatment like RIE is needed before transfer to eliminate the bottom layer totally.

13 - Non Combustible Solids

WGK 2